NVD4856N mosfet equivalent, power mosfet.
* Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Driver Losses
* Optimized Gate Charge to Minimize Switching .
Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
* These Devices are Pb−Fr.
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